method for manufacturing a semiconductor devicebased on a surface of a half geleiderlichaam an opening provided a first layer of silica and throughout the opening a second layer of silicon dioxide are presented.the second layer of such a quantity of a compound of an element of a different doteringsstofelement added that the etssnelheid of twerkwijze paper-making vin a semiconductor device, which on a surface of a half geleiderlichaam an opening of a v