首页> 外国专利> halfgeleiderinrichting with a plaatvorming half geleiderlichaam over at least a portion of the thickness of the halfgeleiderlichaam bevelled edges.it is equipped with a metal electrode is a gelijkrichtende transition with the semiconductor body and method for the manufacture of the halfgeleiderinrichting.

halfgeleiderinrichting with a plaatvorming half geleiderlichaam over at least a portion of the thickness of the halfgeleiderlichaam bevelled edges.it is equipped with a metal electrode is a gelijkrichtende transition with the semiconductor body and method for the manufacture of the halfgeleiderinrichting.

机译:在至少一半的半角锥斜角厚度的一部分厚度范围内,用半球形的糊状富集的半凝胶富集。它配备有金属电极,是半导体主体的凝胶过渡和用于制造半糊化富集的方法。

摘要

机译:

著录项

  • 公开/公告号NL167277B

    专利类型

  • 公开/公告日1981-06-16

    原文格式PDF

  • 申请/专利权人 N.V. PHILIPS GLOEILAMPENFABRIEKEN EINDHOVEN.;

    申请/专利号NL19700012831

  • 发明设计人

    申请日1970-08-29

  • 分类号H01L23/34;H01L21/30;H01L29/42;H01L29/86;

  • 国家 NL

  • 入库时间 2022-08-22 16:10:25

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