Soln. for prodn. of highly arsenic doped silica film - contains THF and opt. high boiling glycol to maintain high reactive arsenic concn.

摘要

Film-forming soln. for the prodn. of a highly As-doped oxide film on a (semiconductor) substrate by hydrolysis of a Si cpd. in the soln. contains THF and pref. also high-boiling glycol(s), esp. polyethylene glycol or polypropylene glycol with a degree of polymerisation of 400-1200. The amt. of glycol in the soln. is 0.1-5%. The Si cpd. is an ethyl orthosilicate and it is dissolved in an acid aq. phase contg. As. The addn. of THF makes it possible to maintain a high concn. of reactive As in the soln., even after prolonged storage in moist air.