首页> 外国专利> Overload protection circuit - limits collector-emitter voltage of power transistor switch by using auxiliary transistor to form quasi-darlington pair

Overload protection circuit - limits collector-emitter voltage of power transistor switch by using auxiliary transistor to form quasi-darlington pair

机译:过载保护电路-通过使用辅助晶体管形成准达林顿对来限制功率晶体管开关的集电极-发射极电压

摘要

The protection circuit has an auxiliary transistor (4) connected by its emitter to the power transistor's (5) base and by its collector via a diode (7) to the power transistor's collector. The bases of the two transistors are connected via separate resistors to the same control current source (1). The two transistors act as a quasi-Darlington circuit in overload mode so that the control current is small (w.r.t. load current) during overload and the loss through the pair is small during normal operation. The diode prevents inversion. The auxiliary transistor is off in normal operation.
机译:该保护电路具有一个辅助晶体管(4),该辅助晶体管的发射极与功率晶体管(5)的基极相连,并通过其集电极通过二极管(7)与功率晶体管的集电极相连。两个晶体管的基极通过单独的电阻器连接到同一控制电流源(1)。这两个晶体管在过载模式下充当准达灵顿电路,因此在过载期间控制电流很小(w.r.t.负载电流),在正常工作期间通过该对的损耗很小。二极管可防止反相。在正常操作中,辅助晶体管处于关闭状态。

著录项

  • 公开/公告号DE2935666A1

    专利类型

  • 公开/公告日1981-03-19

    原文格式PDF

  • 申请/专利权人 LICENTIA PATENT-VERWALTUNGS-GMBH;

    申请/专利号DE19792935666

  • 发明设计人 FRICKEERNST-DIETRICH;

    申请日1979-09-01

  • 分类号H03K17/08;H02H9/04;H03K17/60;

  • 国家 DE

  • 入库时间 2022-08-22 15:14:54

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