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METHOD OF RORMING ELECTRICALLY CONDUCTIVE BURIED MEMBER IN THIN FILM

机译:薄膜中导电性埋线组件的绕制方法

摘要

Disclosed herein is a method for making electrically conductive penetrations into thin films and equivalent. The penetrations reach from the outside surface of the thin films to be grown by means of depostion as layers at a temperature of 200 DEG to 700 DEG C. to an interior electrode layer. According to the method a desired quantity of a metallic substance whose melting point is lower and boiling point higher than the growing temperature of the thin film layers is placed on the interior electrode layer within each desired penetration area before the preparation of the following layer. Hereby the metallic substance, when being molten, prevents the formation of layers in the area above itself and, when hardening, forms the desired electrically conductive penetrations.
机译:本文公开了一种用于使导电穿透物进入薄膜等价物中的方法。穿透物从要通过沉积生长的薄膜的外表面在200℃至700℃的温度到达内部电极层。根据该方法,在制备下一层之前,将所需量的熔点低于薄膜层的生长温度且沸点高于薄膜层的生长温度的金属物质放置在内部电极层上的每个所需穿透区域内。由此,金属物质在熔化时防止在其自身上方的区域中形成层,并且在硬化时形成期望的导电穿透。

著录项

  • 公开/公告号JPS5761285A

    专利类型

  • 公开/公告日1982-04-13

    原文格式PDF

  • 申请/专利权人 OI ROHII AB;

    申请/专利号JP19810118576

  • 发明设计人 YORUMA ORABUI ANTOSON;

    申请日1981-07-30

  • 分类号H05B33/26;G09F13/22;H01L21/3205;H01L21/60;H01L23/52;H01L27/01;H05B33/12;H05K3/40;

  • 国家 JP

  • 入库时间 2022-08-22 14:22:15

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