首页> 外国专利> Transistorised transmitter amplifier circuit - has control circuit to adjust driving point of DC voltage to avoid collector-base barrier layer breakdown and transistor failure

Transistorised transmitter amplifier circuit - has control circuit to adjust driving point of DC voltage to avoid collector-base barrier layer breakdown and transistor failure

机译:晶体管发射放大器电路-具有控制电路,可调节直流电压的驱动点,以避免集电极-基极势垒击穿和晶体管故障

摘要

Common emitter type transistorised transmitter amplifier arrangement is designed to avoid transistor damage as a result of break-through of the collector-base barrier layer, commensurate with the lowest possible design costs. To meet the safety requirements, a control circuit is provided to adjust the driving d.c. voltage (Uo) when, as a criterion for bringing in regulation, a threshold value is reached by the base-emitter voltage, at which the latter voltage changes in the positive direction as a result of breakdown of the collector-base barrier layer.
机译:普通发射极型晶体管化发射机放大器的设计避免了由于集电极-基极势垒层的穿透而造成的晶体管损坏,其设计成本最低。为了满足安全要求,提供了控制电路来调节驱动直流电。当作为引入调节的标准时,基极-发射极电压达到阈值时,该电压(Uo)会由于集电极-基极阻挡层的击穿而在正方向上变化。

著录项

  • 公开/公告号DE3022759A1

    专利类型

  • 公开/公告日1981-12-17

    原文格式PDF

  • 申请/专利权人 LICENTIA PATENT-VERWALTUNGS-GMBH;

    申请/专利号DE19803022759

  • 发明设计人 KLEISCHEWILHELMDIPL.-ING.;

    申请日1980-06-13

  • 分类号H03F1/52;H03F3/24;

  • 国家 DE

  • 入库时间 2022-08-22 12:43:38

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号