首页> 外国专利> Selective duennschicht - gas sensor with great sensitivity and stability for the detection and measurement of gaseous hydrocarbon - impurities in the air on the basis of tungsten oxide (wo (arrow down) x (arrow down)) - semiconductors, and a process for its production

Selective duennschicht - gas sensor with great sensitivity and stability for the detection and measurement of gaseous hydrocarbon - impurities in the air on the basis of tungsten oxide (wo (arrow down) x (arrow down)) - semiconductors, and a process for its production

机译:选择性Duennschicht-具有高灵敏度和稳定性的气体传感器,用于检测和测量气态碳氢化合物-基于氧化钨(wo(向下箭头)x(向下箭头))的空气中的杂质-半导体及其生产工艺

摘要

1. A selective thin-layer gas sensor of high sensitivity and stability for detecting and measuring gaseous hydrocarbon impurities in the air on having a basis of tungsten oxide semiconductors on substrates made of quartz glass, oxidized silicon, or ceramic, wherein the electrical resistance of the tungsten oxide layer depends on the type and concentration of the gas to be detected, characterised in that the tungsten oxide semiconductor consists of a sputtered WO3-delta -thin layer, where 0 delta 0.2.
机译:1.一种具有高灵敏度和稳定性的选择性薄层气体传感器,用于在石英玻璃,氧化硅或陶瓷制成的基板上具有氧化钨半导体的基础上,检测和测量空气中的气态碳氢化合物杂质,其中电阻为氧化钨层取决于要检测的气体的类型和浓度,其特征在于,氧化钨半导体由溅射的WO 3-δ-薄层组成,其中0 <δ<0.2。

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