Semiconductor device for use above intrinsic conductivity temp. - esp. as temp. sensor has majority charge carriers fixed in high ohmic zone

摘要

Semiconductor device for temps. above that at which intrinsic conductivity occurs has a semiconductor body with a high-ohmic zone of one conductivity type bounded by a first and second contacted low-ohmic zone of the same conductivity type. The ratio of the effective area of the junction between the first low-ohmic zone (4) and the high-ohmic zone (1) and the effective area of the junction between the second low-ohmic zone (24) and the high-ohmic zone (1) w.r.t. the current flowing through the device and its direction are selected so that, in the high ohmic zone, an electric field strength is produced such that practically all minority charge carriers are drawn to the low-ohmic zone at negative potential and thus most of the majority charge carriers are fixed in the high-ohmic zone and the intrinsic conductivity is largely ineffective. The device is esp. useful as temp. sensor.