首页>
外国专利>
Selective etching of indium oxide and/or stannic oxide - by mixt. contg. conc. hydrochloric acid, conc. orthophosphoric acid, and small amt. of hydrogen peroxide
Selective etching of indium oxide and/or stannic oxide - by mixt. contg. conc. hydrochloric acid, conc. orthophosphoric acid, and small amt. of hydrogen peroxide
展开▼
机译：通过混合选择性地蚀刻氧化铟和/或氧化锡。续浓浓盐酸正磷酸，并且小。过氧化氢
展开▼
页面导航
摘要
著录项
相似文献
摘要
The etchant consists of a mixt. contg. nitric acid (sic) and H3PO4, plus a small amt. of H2O2. The pref. etchant consists of a mixt. of 100-300 ml HCl (36%), 700-900 ml H3PO4 (85%), and 5-50 ml H2O2. The esp. pref. etchants contain: (I) 200 ml HCl (36%), 790 ml H3PO4 (85%), 10 ml H2O2 (30%); or (II) 200 ml HCl (36%), 790 ml H3PO4 (85%), 10 ml HNO3 (65%), i.e. the H2O2 may be replaced by HNO3. The etchant is pref. used at 30-50, esp. 45 deg.C. Used e.g. in the mfr. of liq. crystal visual display indicators, using glass plates with electrodes of In2O3 and/or SnO2, the zones on which integrated circuits are to be soldered. Such zones consist of an underlay of Cr covered by Cu. Advantage is that the etchant does not attack the Cr or Cu, but can completely remove In- and Sn-oxides.
展开▼
机译：蚀刻剂由混合液组成。续硝酸（硫酸）和H3PO4，外加少量氨纶。 H2O2。偏好。蚀刻剂由混合液组成。 100-300毫升HCl（36％），700-900毫升H3PO4（85％）和5-50毫升H2O2。特别是偏好蚀刻剂包含：（I）200 ml HCl（36％），790 ml H3PO4（85％），10 ml H2O2（30％）;或（II）200 ml HCl（36％），790 ml H3PO4（85％），10 ml HNO3（65％），即H2O2可以用HNO3代替。蚀刻剂是优选的。使用时间为30-50，尤其是。 45℃用过的在mfr。的液量晶体视觉显示指示器，使用带有In2O3和/或SnO2电极的玻璃板，在其上焊接集成电路的区域。这些区域由被铜覆盖的Cr底衬组成。优点是蚀刻剂不会腐蚀Cr或Cu，但可以完全去除In和Sn氧化物。
展开▼
