roentgen - and / or korpuskular radiation - semiconductor detector in an integrated construction

摘要

1. A semiconductor detector for X-rays and corpuscular radiation comprising a scintillation body and a photo-diode having a blocking layer junction and electrodes, where the scintillation body (2) and the photo-diode are two portions of a single monolithic semiconductor body (2) consisting of a III-V-semiconductor material, where the semiconductor material having a direct junction of the portion forming the scintillation body (2), and the material of the portion forming the photo-diode (5) exhibit a considerably different absorption behaviour towards the photons (4) which are produced by the radiation (5) to be detected, characterised in that the material of the portion forming the scintillation body (2) is a semiconductor material whose quantum energy of radiating junctions corresponds to the energy gap between a low-energy branch of the conduction band and a high-energy branch of the valence band.