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METHOD FOR MANUFACTURING POWER TRANSISTORS HAVING ELECTRON IRRADIATION-MODIFIED PARAMETERS
METHOD FOR MANUFACTURING POWER TRANSISTORS HAVING ELECTRON IRRADIATION-MODIFIED PARAMETERS
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机译:具有电辐射修饰参数的功率晶体管的制造方法
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摘要
P The method for reducing the load storage time as well as the gain parameters in a semiconductor transistor comprises, according to the present invention, a transistor irradiation phase with a pre-terminated electron flux density. OPTIMIZING THE RELATION BETWEEN GAIN AND STORAGE TIME. / P
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