IMPURITY DOPING METHOD OF GALLIUM ARSENIDE VAPOR GROWTH CRYSTAL
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机译:砷化镓气相晶体的杂质掺杂方法
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摘要
PURPOSE:The inactive gas of N2, etc is discharge from upper stream than seed crystal substrate in order to produce with good reproduction property the density distribution which varies thinly and sharply in QaS vapor growth crystal.
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