首页> 外国专利> FABRICATION BASED ON A POSITIVE ACTING PHASE COMPATIBLE BLEND OF MATRIX POLYMER AND MODIFIER POLYMER

FABRICATION BASED ON A POSITIVE ACTING PHASE COMPATIBLE BLEND OF MATRIX POLYMER AND MODIFIER POLYMER

机译:基质聚合物和改性剂聚合物的正相相混配

摘要

Abstract of the DisclosureA phase compatible polymer blend serves as a radiationsensitive lithographic resist in the fabrication ofcircuits and circuit elements. Radiation sensitivityis due to inclusion of a "modifier". Resistproperties, notably stability to agents and ambients tobe masked are attributed largely to a second component,the "matrix polymer".In an exemplary embodiment in which the blend ispositive acting, fabrication including dry processingis dependent upon use of a resist blend of a vapordeveloping polysulfone and a novolac. The novolac,inherently soluble in alkaline media is renderedinsoluble in the blend. Radiation initiateddepolymerization results in volatilization of themodifier to render the irradiated portions of theresist soluble in alkaline developers.Modifier may function in other manner; for example, itmay undergo radiation initiated polymerization so as toinsolubilize the blend in irradiated regions, soresulting in a negative acting resist.Effective isolation of lithographic from maskingfunctions permit design of blends with highlithographic sensitivity, as well as good processingstability. The latter is sufficient to permit use inmany dry processing procedures as practiced in directwriting, as well as in mask fabrication of large scaleintegrated silicon circuits.
机译:披露摘要相兼容的聚合物共混物可作为辐射感光光刻胶的制造电路和电路元件。辐射敏感性是由于包含“修饰符”。抗特性,尤其是对试剂和环境的稳定性被掩盖在很大程度上归因于第二部分,“基质聚合物”。在其中所述共混物为正作用,包括干法加工在内的制造取决于使用蒸汽的抗蚀剂混合物开发聚砜和酚醛清漆。酚醛清漆固有地溶于碱性介质不溶于混合物。辐射开始解聚会导致修改器以渲染抵抗溶于碱性显影剂。修饰符可以以其他方式起作用;例如,它可能会受到辐射引发的聚合,从而在辐照区域使混合物不溶解,因此产生负性抗蚀剂。有效隔离光刻与掩膜功能允许设计高掺合度光刻敏感性以及良好的加工稳定性。后者足以允许在直接实行许多干法加工程序写作,以及大规模的掩模制造集成硅电路。

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