Method of producing alloyed metal contact layers on crystal- orientated semiconductor surfaces by energy pulse irradiation

摘要

A region of a semiconductor surface intended for a metal contact is scanned with a closely packed sequence of intense laser light pulses so as to generate a disturbed surface layer and a metal layer is then applied and alloyed into the semiconductor surface. The invention is particularly useful with silicon crystal surfaces orientated in the 100 direction, which for the manufacture of semiconductor components, such as thyristors having controllable short-circuits generated by integrated field effect transistors, are provided on their back side with an aluminum contact or a metal silicide contact.