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Reactive sputter etching of polysilicon utilizing a chlorine etch gas
Reactive sputter etching of polysilicon utilizing a chlorine etch gas
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机译:利用氯蚀刻气体对多晶硅进行反应性溅射蚀刻
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摘要
In a chlorine plasma, reactive sputter etching of monocrystalline silicon, undoped polycrystalline silicon or doped polycrystalline silicon is achieved. The etching processes are substantially free of any loading effects and are characterized by high resolution, excellent uniformity and high selectivity with respect to, for example, silicon dioxide. For silicon and undoped polysilicon, the edge profile of the etched material is anisotropic. For doped polysilicon, the edge profile can be controlled to occur anywhere in the range from completely isotropic to completely anisotropic.
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