首页> 外国专利> METHOD FOR PROVIDING HIGH ELECTRIC CONDUCTIVITY TO SURFACE LAYER OF DIAMOND BY ION IMPLANTATION

METHOD FOR PROVIDING HIGH ELECTRIC CONDUCTIVITY TO SURFACE LAYER OF DIAMOND BY ION IMPLANTATION

机译:通过离子注入提供高电导率的金刚石表面层的方法

摘要

PURPOSE:To provide high electric conductivity to the surface of diamond by implanting ions into the surface of the diamond after heating the surface to a specified temp. or above. CONSTITUTION:Ions of an element such as N, Ar, Ti or Zr are implanted into the surface of diamond by ion irradiation to make the surface amorphous and to improve the electric conductivity. At this time, the surface of the diamond to be subjected to ion implantation is heated to =50 deg.C by external heating such as resistance heating or with ion beams for ion irradiation. Since high electric conductivity is provided to the surface layer of the diamond by the ion implantation, the diamond shows superior quality when used as a material for a light transmitting electrode, a stylus for a videodisk or a record player.
机译:目的:通过在将金刚石表面加热至指定温度后将离子注入金刚石表面,以提供高导电性。或以上。组成:通过离子辐照将元素(例如N,Ar,Ti或Zr)离子注入金刚石表面,以使表面非晶化并提高导电性。此时,通过诸如电阻加热之类的外部加热或利用用于离子辐照的离子束,将要进行离子注入的金刚石的表面加热至> = 50℃。由于通过离子注入将高电导率提供给金刚石的表面层,因此当金刚石用作透光电极,视盘或记录播放器的触针的材料时,金刚石显示出优异的质量。

著录项

  • 公开/公告号JPS59195516A

    专利类型

  • 公开/公告日1984-11-06

    原文格式PDF

  • 申请/专利权人 RIKAGAKU KENKYUSHO;

    申请/专利号JP19830069644

  • 发明设计人 SAKAIRI HIDEO;IWAKI MASAYA;

    申请日1983-04-20

  • 分类号G11B3/46;C01B31/06;C30B33/00;C30B33/04;G11B9/06;G11B9/07;G11B11/00;

  • 国家 JP

  • 入库时间 2022-08-22 09:39:13

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