A method for measurement of temperature distribution over the surface of a sample, and a system for performing such measurement

摘要

The sample (M), for example an integrated semi- conductor circuit element (600), is maintained by a condition setting unit (110) in a first known-temperature (T₁) condition and amounts of radiation (P₁) from a number of sample surface regions (1 to 18) are detected by a detector (101). The sample (M) is then maintained in a second known-temperature (T₂) condition and amounts of radiation (P_z) from the surface regions (1 to 18) are detected by the detector (101).;The sample (M) is then maintained in a specified measuring condition and amounts of radiation (P_o) from the surface regions (1 to 18) are detected by the detector (101).;From the amounts of radiation detected (P₁, P_z, P_o) and the known-temperatures (Ti, T₂) an operations unit (200,300,400,500) determinesthe unknown temperature (To) of each of the surface regions (1 to 18) in the specified measuring condition despite the different materials found in the regions.;In relation to an integrated semiconductor circuit element (600) the specified measuring condition may be an operation condition of the element arising when current is applied to the element.