首页> 外国专利> Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method

Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method

机译:具有多个磁场源的磁增强溅射装置,包括改进的等离子体俘获装置和方法

摘要

A magnetron sputtering device wherein a plurality of magnetic field sources are employed to enhance uniformity of cathode sputtering. Each of the magnetic field sources is independently capable of establishing a discharge at the cathode if the other magnetic field sources are removed so that portions of a V-shaped erosion pattern produced by a primary discharge are also eroded to thus effect the more uniform cathode sputtering.PPIn one embodiment of the invention, a magnetic field dome of a first polarity is disposed over a second magnetic field dome of the opposite polarity, the domes being disposed over the cathode so that a closed plasma loop is established, the loop including a first sputtering path which extends over the cathode and a second non-sputtering return path which is disposed over the sputtering path and between the first and second magnetic field domes. P PThe above technique for trapping plasma between the first and second magnetic field domes is unique and has applications to areas other than sputtering.
机译:一种磁控溅射装置,其中采用多个磁场源以增强阴极溅射的均匀性。如果除去其他磁场源,则每个磁场源都能够独立地在阴极处建立放电,这样,由一次放电产生的V形腐蚀图案的部分也会被侵蚀,从而实现更均匀的阴极溅射在本发明的一个实施例中,第一极性的磁场穹顶设置在相反极性的第二磁场穹顶上,该穹顶设置在阴极之上,从而建立闭合的等离子体回路该环包括在阴极上方延伸的第一溅射路径和设置在溅射路径上方且在第一和第二磁场圆顶之间的第二非溅射返回路径。第一和第二磁场穹顶之间的间隔是独特的,并且可应用于溅射以外的区域。

著录项

  • 公开/公告号US4461688A

    专利类型

  • 公开/公告日1984-07-24

    原文格式PDF

  • 申请/专利权人 VAC-TEC SYSTEMS INC.;

    申请/专利号US19800161885

  • 发明设计人 CHARLES F. MORRISON JR.;

    申请日1980-06-23

  • 分类号C23C15/00;

  • 国家 US

  • 入库时间 2022-08-22 08:38:03

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