首页> 外国专利> two substances existing reflexminderungs layer between a most resourceful medium with a refractive index n amp; amp; darr; 1 amp; amp; darr; amp; 13 and a part adjacent hochreflektierenden medium and method for their production

two substances existing reflexminderungs layer between a most resourceful medium with a refractive index n amp; amp; darr; 1 amp; amp; darr; amp; 13 and a part adjacent hochreflektierenden medium and method for their production

机译:两种物质存在于反射最强的介质之间的反射层之间,折射率n和amp; dar 1和dar & 13和与hochreflektierenden相邻的部分介质及其生产方法

摘要

PCT No. PCT/DE80/00031 Sec. 371 Date Jan. 25, 1981 Sec. 102(e) Date Jan. 23, 1981 PCT Filed Mar. 17, 1980 PCT Pub. No. WO80/02749 PCT Pub. Date Dec. 11, 1980.A reflection-reducing layer (S) between an incidence medium (E) and a highly reflecting surface (3) is described, wherein for the refractive index n1 of the incidence medium (E) and the refractive index n2 of the reflection-reducing layer (S) the relationship of n1=n2 or at least n1 &persp& n2 is valid and the reflection-reducing layer (S) has an absorbtivity such that no reflecting radiation components are emerging from it in the direction of the incidence medium (E). The reflection-reducing layer (S), conveniently consisting of two partial layers, is preferably constructed so that the first partial layer consists of the same material as the incidence medium (E), for example, germanium, and the second partial layer of the same material as the highly reflecting surface (3), for example, chromium. A process for the preparation of a reflection-reducing layer (S) of this type is further disclosed, said process being characterized by the layer thickness controlled vapor deposition in a high vacuum, wherein conveniently the material or the mixture of materials is deposited simultaneously or successively by means of sputtering and the thickness of the layer is controlled during the vapor deposition or sputtering by means of an oscillator crystal.
机译:PCT号PCT / DE80 / 00031第371日期1981年1月25日秒102(e)日期,1981年1月23日,PCT,1980年3月17日,PCT公开。 WO80 / 02749 PCT公开号日期为1980年12月11日,描述了入射介质(E)与高反射表面(3)之间的减反射层(S),其中入射介质(E)的折射率n1和折射率减反射层(S)的n2的关系为n1 = n2或至少n1&persp&n2是有效的,并且减反射层(S)的吸收率使得在该方向上没有反射辐射成分从该反射层出来。入射介质(E)。方便地由两个部分层组成的减少反射的层(S)优选地构造成使得第一部分层由与入射介质(E)相同的材料(例如锗)组成,并且第二部分层由第二层构成。与高反射表面(3)相同的材料,例如铬。进一步公开了制备这种类型的反射减少层(S)的方法,所述方法的特征在于在高真空下控制层厚度的气相沉积,其中方便地同时沉积材料或材料混合物或沉积材料。通过溅射连续地进行,并且在气相沉积或通过振荡器晶体的溅射期间控制层的厚度。

著录项

  • 公开/公告号JPS59178601U

    专利类型

  • 公开/公告日1984-11-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19840029388U

  • 发明设计人

    申请日1984-03-02

  • 分类号G02B1/10;

  • 国家 JP

  • 入库时间 2022-08-22 08:33:21

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