FLASH ANNEALING METHOD OF HYDROGENATED AMORPHOUS SILICON

摘要

PURPOSE:To etch simultaneously the part wherein a polycrystal is not needed without incurring the deterioration of characteristics and the unevenness of the film thickness due to the desorption of hydrogen by carrying out simultaneously the partial polycrystallization of hydrogenated amorphous silicon and the etching. CONSTITUTION:A light transmissible film 3 of a substance such as SiO2, Si3N4, etc. for preventing the desorption of hydrogen is formed on the part of a hydrogenated amorphous silicon thin film 2 formed on a substrate 1. Then the light 4, having higher luminous intensity than that in an ordinary flash annealing method, is irradiated by a xenon flash lamp, etc. to polycrystallize the part of the film 2 covered with the film 3, and the etching of the part of the thin film 2 not covered with the film 3 is simultaneously carried out. In this way, an expensive shading can be dispensed with, and the precision of the position of the polycrystal part can be obtained.