FORMATION OF THIN TITANIUM DISULFIDE FILM AT LOW TEMPERATURE

摘要

PURPOSE:To form a thin titanium disulfide film on a substrate kept at a low temp. by carrying out film formation by a plasma chemical vapor-phase growing method using titanium tetrachloride and hydrogen sulfide as source gases. CONSTITUTION:A thin titanium disulfide film is formed on a substrate by a plasma chemical vapor-phase growing method using titanium tetrachloride and hydrogen sulfide as source gases. By this method a thin titanium disulfide film can be formed on a substrate kept at a low temp., so a polymer substrate, a semiconductor device or a solar cell can be used as the substrate.