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GROWING HIGH RESISTIUITY QUARTERNARY MATERIAL BY LIQUID PHASE EPITAXY
GROWING HIGH RESISTIUITY QUARTERNARY MATERIAL BY LIQUID PHASE EPITAXY
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机译:液相法生长高电阻率的四方材料
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摘要
Iron has too low a solubility to be a convenient dopant for producing high resistivity blocking material by liquid phase epitaxy in the construction of InP and InGaAsP semiconductor devices. Manganese is used in its stead in conjunction with a donar such as germanium to act as partial compensation in view of the fact that the acceptor level of manganese in InP is not as deep as that of iron.
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