首页> 外国专利> PHOTOCHEMICAL VAPOR DEPOSITION WITH SYNCHROTRON RADIATION LIGHT

PHOTOCHEMICAL VAPOR DEPOSITION WITH SYNCHROTRON RADIATION LIGHT

机译:同步辐射光的光化学气相沉积

摘要

PURPOSE:To remarkably improve the controllability of reaction as well as to increase the speed of forming films, by employing a synchrotron radiant light as a light source for optical pumping. CONSTITUTION:After a substrate 1 is disposed within a reaction chamber 1, a high vacuum is produced within the chamber by a vacuum means through an exhaust port 5. A required material gas is introduced through a reaction gas inlet port 4, while light radiated by a synchrotron beam port 3 is introduced into the reaction chamber through an optical system 2 and a window 6. The material gas is thus irradiated and excited by the light so as to deposit a reaction product on the substrate 7. The synchrotron-radiated light SOR, which is produced when electrons rotate along the circular track of a high-energy electron synchrotron and an electron storing ring, has a range of wavelengths extending from those of X radiation to those of infrared radiation, and is continuous. Its intensity is therefore is 102-104 times higher than that of a conventional light source. Accordingly, the use of this SOR enables the controllability of the growth of films to be improved remarkably.
机译:目的:通过使用同步加速器辐射光作为光泵浦的光源,显着提高反应的可控性并提高成膜速度。组成:将基板1放置在反应室1中后,通过真空装置通过排气口5在反应室内产生高真空。所需的原料气通过反应气体入口4引入,同时由通过光学系统2和窗口6将同步加速器束端口3引入反应室。材料气体因此被光照射和激发,从而将反应产物沉积在基板7上。电子沿着高能电子同步加速器和电子存储环的圆形轨道旋转时产生的光,具有从X辐射的波长到红外辐射的波长范围,并且是连续的。因此,其强度是传统光源的强度的10 2 -10 4倍。因此,使用该SOR可以显着改善膜生长的可控性。

著录项

  • 公开/公告号JPS61219129A

    专利类型

  • 公开/公告日1986-09-29

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP19850060335

  • 发明设计人 TSUTSUI YASUMITSU;

    申请日1985-03-25

  • 分类号C23C16/48;H01L21/205;H01L21/263;H01L21/285;H01L21/31;

  • 国家 JP

  • 入库时间 2022-08-22 07:47:54

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