首页> 外国专利> MULTIPOLE PINCH METHOD AND APPARATUS FOR PRODUCING AVERAGE MAGNETIC WELL IN PLASMA CONFINEMENT

MULTIPOLE PINCH METHOD AND APPARATUS FOR PRODUCING AVERAGE MAGNETIC WELL IN PLASMA CONFINEMENT

机译:等离子体约束中平均磁阱的多极压制方法及装置

摘要

MULTIPOLE PINCH METHOD AND APPARATUS FOR PRODUCINGAVERAGE MAGNETIC WELL IN PLASMA CONFINEMENTABSTRACTA multipole plasma pinch method and appara-tus produces hot magnetically confined z-pinch plasmawith a plurality of z-pinch current channels arrangedso as to generate a multipolar magnetic field andat least one hyperbolic magnetic axis within the plasmaspace roughly enclosed by the channels, forming there-by a region of average magnetic well in a region ofnested closed plasma magnetic surfaces surroundingthe plasma current channels, when the magnetic fieldcomponent in the direction of the hyperbolic axis isalso made to be substantially zero in the vicinityof the hyperbolic axis. The multipole pinch inven-tion may be operated so that q and field reversaltake place within the plasma, and the plasma so pro-duced closely approximates known theoretical stabilityconditions. The well-producing hyperbolic axis ofthe present invention is produced effectively byreplacing the solid conducting rings of prior artmultipole plasma confinement devices by z-pinch-liketoroidal current channel loops of plasma. The plasmais formed inside a vacuum chamber and an electricallyconducting shaping shell assembly, whose noncircularpoloidal cross section imparts the desired shape tothe plasma. The shape of the plasma may be maintainedand/or adjusted by means of electrical currentsdriven through appropriately distributed externalconductors.
机译:多极挤压方法和生产装置等离子体约束中的平均磁阱抽象多极等离子体收缩方法和装置tus产生热的磁约束z-inch等离子体排列有多个z收缩电流通道从而产生多极磁场等离子体内至少一个双曲磁轴大致被通道包围的空间,在其中形成-通过在一个区域内的平均磁阱区域嵌套的封闭等离子磁性表面周围等离子电流通道,当磁场在双曲轴方向上的分量是在附近也基本上设为零双曲轴。多极收缩发明可以进行操作以使q和磁场反转发生在等离子内,因此等离子产生近似于已知的理论稳定性条件。产生良好的双曲轴本发明有效地通过替代现有技术的固体导电环类似于z捏的多极等离子体限制装置等离子体的环形电流通道回路。等离子形成在真空室内,进行成型壳体组装,其非圆形极向截面赋予所需的形状等离子。可以保持等离子体的形状和/或通过电流调节通过适当分布的外部驱动指挥。

著录项

  • 公开/公告号CA1208165A

    专利类型

  • 公开/公告日1986-07-22

    原文格式PDF

  • 申请/专利权人 GA TECHNOLOGIES INC.;

    申请/专利号CA19820417703

  • 发明设计人 OHKAWA TIHIRO;

    申请日1982-12-14

  • 分类号G21B1/00;

  • 国家 CA

  • 入库时间 2022-08-22 07:37:08

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