PROCESS FOR FORMING SLOTS OF DIFFERENT TYPES IN SELF-ALIGNED RELATIONSHIP USING A LATENT IMAGE MASK

摘要

Slots of different types are manufactured using a simple latent image mask, said slots being located relative to each other in self-alignment relationship. In one embodiment an oxide of the semiconductor material, eg. silicon oxide (11) is used as a unitary masking layer. The slots (15, 16) of different types are defined in the mask and are manufactured consecutively by a universal etching method and using different thicknesses for the oxide layers on the slots of different types. When the slits (15, 16) are formed, they are semplies of a suitable material (17). Alternatively, or uses at least a latent image mask double layer, wherein the two materials (31, 32) have different etch properties. A layer (31) is used as a stop etch layer during fabrication of one of the types of slots (34).