Brief description of embodiments of a bipolar transistor high voltage.

摘要

Of a bipolar transistor high voltage in a casing creates with the aid of partitions of insulation 6 in three layers epitaxial superimposed 2, 3, 7 of the type of conduction which are alternate, litters by a substrate 1. / p & & p & this characterizes in that it is produced the partitions 6 on the basis of two portions 6a, 6b, the first portion 6a created before the deposition of the superficial layer epitaxial 7, the second portion 6b created after the deposition of said layer. / p & & p & application to the embodiments in the method "resurf" semi - conductors devices comprising at least one power transistor high voltage.