SWITCHING CONTROL CIRCUIT WITH GALVANIC ISOLATION AND ZERO-VARYING CONDUCTION HOURS AT INFINITY

摘要

P THE INVENTION CONCERNS THE SWITCHING COMMAND OF POWER SEMICONDUCTOR COMPONENTS. / P P TO PROVIDE CONTROL WITH GALVANIC ISOLATION AND WITH VERY LARGE VARIATION POSSIBILITY OF CONDUCTION AND BLOCKING HOURS, ON PROVIDES THAT THE CONTROL CIRCUIT IS POWERED THROUGH A TR TRANSFORMER BY AN OSCILLATOR. THIS OSCILLATOR IS HIMSELF SUPPLIED BY A CONTINUOUS VOLTAGE THAT CAN TAKE TWO LEVELS (VA OR VB) ACCORDING TO WHICH THE POWER TRANSISTOR (TP) TO BE CONTROLLED MUST BE DRIVED OR BLOCKED. SECONDARY DETECTION OF THE VOLTAGE LEVEL VA OR VB USED IN THE PRIMARY ENSURES THE CONTROL OF THE POWER TRANSISTOR TP. / P