PROCEDURE FOR MANUFACTURING A PIEZORESISTIVE RESISTANCE ELEMENT AND APPARATUS APPLYING SAID PROCEDURE, AND PICK-UP MANUFACTURED BY THE PROCEDURE, IN PARTICULAR A PRESSURE PICK-UP OR EQUIVALENT

摘要

A procedure for manufacturing a piezoresistive resistance element (35). In the procedure, on an insulator substrate (20) is produced in chemical gas phase growing (CVD) a piezoresistive resistance element, or elements, (35). The resistance element, or elements, (35) is/are grown on a monocrystal insulator substrate (20) by laser gas phase growing (LCVD) in such manner that as resistance element is produced, from the growing gas, a semiconductor strip or configuration which is monocrystalline in its main parts and which has a given crystal orientation determined by the insulator substrate (20). The insulator substrate (20) and the laser beam (LB) ''tracing'' the resistance element configuration (35) are moved in relation to each other in order to grow the desired resistance configuration. In addition is disclosed a pressure of force pick-up manufactured by the procedure and/or apparatus of the invention, comprising a resistance configuration (35) produced on an artificial sapphire film (20) or another equivalent insulating material substrate by laser gas phase growing (LCVD). The resistance configuration is composed of monocrystal silicon strips (28) or equivalent semiconductor strips, of which the orientation is determined by the insulator substrate.