Thyristor having particular switching characteristics

摘要

1. A thyristor with a semiconductor body which has an n-emitter (1) which is contacted by a cathode (K) and is adjoined by a p-base layer (2), a p-emitter (4) which is contacted by an anode (A) and is adjoined by a n-base layer (3), and controllable emitter short-circuits which are arranged at a boundary surface of the semiconductor body and formed as MIS-structures (M1, M2), and consist in each case of a first semiconductor zone of a first conductivity type which forms an edge zone of the first emitter (1) and is connected to the cathode (K) or anode (A) which contacts this emitter, a second semiconductor zone which is connected in low-ohmic fashion through a conductive coating to the base layer (2) which adjoins this emitter (1), and which consists of a short-circuit zone (7, 8) inserted in this base layer (2), and a semiconductor zone of a second conductivity type which is located between these two semiconductor zones and consists of a sub-zone (10, 11), of the base layer (2) which adjoins the emitter (1) extending to that boundary surface of the semiconductor body which contains the last-mentioned emitter (1), and which is covered by a gate (14, 15) which is electrically insulated from the semiconductor body, characterised in that at least one of these MIS-structures is of the depletion type and at least one of the MIS-structures is of the enhancement type, a first common control terminal (G1) being provided for the gates of the MIS-structures of the first type and a second, common control terminal (G2) being provided for the gates of the MIS-structures of the other type.