首页> 外国专利> A THYRISTOR STRUCTURE WITH INTRINSIC SWITCH-ON AND APPLICATION THEREOF TO THE CONTRUCTION OF A BIDIRECTONAL DEVICE

A THYRISTOR STRUCTURE WITH INTRINSIC SWITCH-ON AND APPLICATION THEREOF TO THE CONTRUCTION OF A BIDIRECTONAL DEVICE

机译:具有内在接通的晶闸管结构及其在双向装置的构造中的应用

摘要

The thyristor includes a first emitter region and a neighboring, inhibiting main base region. The thyristor also has a second main base region and a second emitter region. The first emitter region is subdivided into several first zones electrically connected to each other by cathode contacts. The first base region is also subdivided into several zones electrically connected to each other through trigger contacts. The trigger contacts are coanected to the cathode contacts by an interruption device alowing a short circuit to be made at the trigger contacts for inhibiting thyristor switch-on.
机译:晶闸管包括第一发射极区和相邻的抑制主基极区。晶闸管还具有第二主基极区和第二发射极区。第一发射极区域细分为通过阴极触点彼此电连接的多个第一区域。第一基极区域也细分为通过触发触头彼此电连接的几个区域。触发触头通过中断装置与阴极触头相连,该中断装置允许在触发触头处产生短路以抑制晶闸管导通。

著录项

  • 公开/公告号KR870000152B1

    专利类型

  • 公开/公告日1987-02-12

    原文格式PDF

  • 申请/专利权人 LA TELEMECANIQUE ELECTRIQUE;

    申请/专利号KR19830005520

  • 发明设计人 LETURCQ PHILIPE;

    申请日1983-11-22

  • 分类号H01L29/74;

  • 国家 KR

  • 入库时间 2022-08-22 07:14:35

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