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THYRISTOR WITH A SELF-PROTECTION FUNCTION FOR BREAKOVER TURN-ON-FAILURE

机译:具有自我保护功能的晶闸管,用于突破故障

摘要

A thyristor is comprised of a main thyristor region, a gate region for causing the main thyristor region to be turned on in response to a gate signal, and an amplifying gate region which is turned on to permit the main thyristor region to be turned on when an overvoltage is supplied to the thyristor in the absence of gate signal at the gate portion. The amplifying gate region is provided in a region except an intermediate region between the gate portion and the end of the main thyristor region facing the gate portion. A minority carrier lifetime in the amplifying gate region is longer than that of the main thyristor region and the gate portion.
机译:晶闸管包括主晶闸管区域,用于响应于栅极信号而使主晶闸管区域导通的栅极区域,以及被导通以允许主晶闸管区域导通的放大栅极区域。在栅极部分不存在栅极信号的情况下,将过电压提供给晶闸管。放大栅极区域设置在除了栅极部分与主晶闸管区域的面对栅极部分的端部之间的中间区域之外的区域中。放大栅极区域中的少数载流子寿命长于主晶闸管区域和栅极部分中的少数载流子寿命。

著录项

  • 公开/公告号DE3367701D1

    专利类型

  • 公开/公告日1987-01-02

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号DE19833367701T

  • 发明设计人 OGURA TSUNEO;

    申请日1983-05-17

  • 分类号H01L29/743;H01L29/10;

  • 国家 DE

  • 入库时间 2022-08-22 07:12:36

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