List of jets molecular by thermal cracking for the manufacture of semi-finished - conductors by epitaxial deposition

摘要

The cracking of arsine and phosphine used to form a jet is a continuation of arsenic or phosphorus is carried out on the surfaces inland of a cracking tube 11 forms of quartz or of boron nitride and heating of the packaging by the radiation of a filament 30. The partitions inland breakthroughs 6a, 6b, 6c and 6d increase the surface of the cracking and prevents a molecule of passing through the duct in a straight line. / p & & p & application for the manufacture of components optoelectronic.