首页> 外国专利> LINBO3 SINGLE CRYSTAL PIEZOELECTRIC SUBSTRATE WITH POLARIZATION INVERTING REGION AND MANUFACTURE THEREOF

LINBO3 SINGLE CRYSTAL PIEZOELECTRIC SUBSTRATE WITH POLARIZATION INVERTING REGION AND MANUFACTURE THEREOF

机译:具有极化反转区域的LINBO3单晶压电基板及其制造

摘要

PURPOSE:To easily form a reverse polarity polarization inverting layer to the self-polarization of a substrate by forming the polarization inverting region without adhering other substance to the +C face of an LiNbO3 single crystal substrate. CONSTITUTION:In an LiNbO3 single crystal substrate (Z plate), its self- polarization is directed in a +C axis (Z axis). When the substrate is cooled after it is allowed to stand for a predetermined time in air or inert gas, such as Ar at slightly lower temperature than its Curie point (1150-1200 deg.C), a reverse polarization inverting layer to its own polarization is formed on the substrate +C face side. The thickness of the layer varies depending upon heat treating temperature, treating time and atmosphere. The substrate formed with the polarization inverting region of predetermined depth is adhered on its both faces, for example, with single electrodes. When an AC electric field is applied to the substrate, it can be used as an actuator for implanting a fine displacement.
机译:目的:通过在不将其他物质粘附到LiNbO3单晶衬底的+ C面上的情况下,通过形成偏振反转区域,轻松地形成反极性偏振反转层以实现衬底的自极化。组成:在LiNbO3单晶衬底(Z板)中,其自极化指向+ C轴(Z轴)。当基板在空气或惰性气体(如Ar)中静置预定时间后,在比居里点(1150-1200℃)稍低的温度下冷却后,反向极化反转层变为其自身的极化状态在基板+ C面侧上形成。该层的厚度根据热处理温度,处理时间和气氛而变化。形成有预定深度的偏振反转区域的基板例如通过单个电极粘贴在其两个面上。当将交流电场施加到基板上时,它可用作植入微位移的致动器。

著录项

  • 公开/公告号JPS63260088A

    专利类型

  • 公开/公告日1988-10-27

    原文格式PDF

  • 申请/专利权人 SHIMIZU HIROSHI;

    申请/专利号JP19860197905

  • 申请日1986-08-22

  • 分类号H01L41/18;H01L41/257;

  • 国家 JP

  • 入库时间 2022-08-22 07:06:19

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