GA0.5IN0.5P CRYSTAL GROWTH

摘要

PURPOSE:To facilitate controlling the energy gap of Ga0.5In0.5P crystal while the compostition ratio of Ga is fixed at 0.5 by a method wherein the growth of the Ga0.5 In0.5P crystal which is lattice-matched with a GaAs substrate is carried out by MOVPE and the combinations of the crystal growth temperature, the net gas flow rate ratio of group V/group III of material gases and a positive hole concentration controlled by the P-type dopant are varied in accordance with a predetermined manner. CONSTITUTION:In the growth of Ga0.5In0.5P crystal, trimethylindium or triethylindium is employed as the material of In of group III and trimetyl gallium or triethylgallium is employed as the material of Ga of group III. PH3 is employed as the material of group V and, while the flows of the material gases of In and Ga are fixed, the flow rate of PH3 is varied to vary the ratio of flow rate of group V/flow rate of group III. Further dimetylzinc, diethylzinc or cyclopentadienylmagnesium is employed as P-type dopant material and, by varying the flow rate of the P-type dopant material, a positive hole concentration is varied. For instance, when the positive hole concentration (p) is larger than 1X1018cm-3 (p1X1018cm-3), the energy gap of the Ga0.5In0.5P crystal which is lattice-matched with a GaAs substrate is fixed at 1.91 eV within the growth temperature range from 600 to 750 deg.C and within the V/III ratio range from 60 to 450.