首页> 外国专利> CHARGED CARRIER MULTIPLIER USING AVALANCHE PHENOMENON AND APPLICATION OF THE MULTIPLIER TO PHOTOSENSOR, PHOTOELECTRIC CATHODE AND INFRARED IMAGE DEVICE

CHARGED CARRIER MULTIPLIER USING AVALANCHE PHENOMENON AND APPLICATION OF THE MULTIPLIER TO PHOTOSENSOR, PHOTOELECTRIC CATHODE AND INFRARED IMAGE DEVICE

机译:利用雪崩现象的带电载流子倍增器及其在光敏电阻,光电阴极和红外图像设备中的应用

摘要

Charge carrier multiplication device (CCMD) of a type operating by an avalanche phenomenon which comprises:… - a semiconducting material (1) of homogeneous composition, placed in an electric field (@f);… - plane and parallel layers (2-i) made in this material (1), perpendicular to the operational field (@f), which are thin in relation to the thickness of the material separating them and are n or p doped according to the said type of charge carrier. These layers form storage regions where charge carriers of the said type are confined. …??The injection of at least one charge carrier (3) of the said type into the CCMD triggers the multiplication phenomenon by an ionising collision process; this charge carrier (3) is accelerated by the operational field (@f) and thus acquires an energy sufficient for being able to eject a charge carrier (4-2) of the said type from the doped layer (2-1); the charge carriers (4-1) and (4-2) obtained are guided by the operational field (@f). This ionising collision mechanism is reproduced progressively in the doped layers (2-i) and thus forms an avalanche multiplication phenomenon. …??Application of this device to photodetectors, to photocathodes and to infrared imagers. …IMAGE…
机译:一种通过雪崩现象工作的电荷载流子倍增装置(CCMD),包括:...-置于电场(@f)中的均质组成的半导体材料(1); ...-平面层和平行层(2-i垂直于工作场(@f)的材料(1)制成的材料)相对于分隔它们的材料的厚度要薄,并根据所述电荷载流子的类型进行n或p掺杂。这些层形成限制所述类型的载流子的存储区域。 ……将至少一种所述类型的电荷载体(3)注入到CCDD中,通过电离碰撞过程触发增殖现象。该电荷载体(3)在工作场(@f)的作用下被加速,并因此获得足以能够从掺杂层(2-1)中喷射出所述类型的电荷载体(4-2)的能量;所获得的电荷载子(4-1)和(4-2)由操作场(@f)引导。该电离碰撞机理在掺杂层(2-i)中逐渐再现,因此形成雪崩倍增现象。 …该设备在光电探测器,光电阴极和红外成像仪上的应用。 …<图像>…

著录项

  • 公开/公告号JPS63164372A

    专利类型

  • 公开/公告日1988-07-07

    原文格式PDF

  • 申请/专利权人 THOMSON CSF;

    申请/专利号JP19870315085

  • 申请日1987-12-12

  • 分类号H01L31/0264;H01J1/30;H01J1/308;H01J1/34;H01L27/14;H01L27/146;H01L29/86;H01L31/0352;H01L31/09;H01L31/107;H01L31/111;H01L31/153;

  • 国家 JP

  • 入库时间 2022-08-22 07:05:01

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