ELECTRODEPOSITED DOPED II-GROUP SEMICONDUCTOR THIN FILMS AND DEVICE CONTAINING THE THIN FILMS

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• 3. Method for doping semiconductor layer, method for manufacturing thin film semiconductor device, and thin film semiconductor device [P] . 美国专利： US2006027810A1 . 2006-02-09

  机译： 掺杂半导体层的方法，制造薄膜半导体器件的方法以及薄膜半导体器件

• 4. Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device [P] . 美国专利： US6794277B2 . 2004-09-21

  机译： 掺杂半导体层的方法，制造薄膜半导体器件的方法以及薄膜半导体器件

• 5. Semiconductor layer doping method, thin-film semiconductor device manufacturing method, and thin-film semiconductor device [P] . 美国专利： US2003077886A1 . 2003-04-24

  机译： 半导体层掺杂方法，薄膜半导体器件的制造方法以及薄膜半导体器件

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• 1. Temperature Effects on Gas Sensing Properties of Electrodeposited Chlorine Doped and Undoped n-Type Cuprous Oxide Thin Films [J] . Nayana Bandara ,Charith Jayathilaka ,Dhammika Dissanayaka . 传感技术（英文） . 2014,第3期
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