首页> 外国专利> process for the manufacture of a halfgeleiderinrichting, which made the halfgeleiderlichaam halfgeleiderlichaam with a layer of glasmateriaal provided.which is equipped with a window, is subjected to a heat treatment at a temperature such that the glasmateriaal is brought to flow.

process for the manufacture of a halfgeleiderinrichting, which made the halfgeleiderlichaam halfgeleiderlichaam with a layer of glasmateriaal provided.which is equipped with a window, is subjected to a heat treatment at a temperature such that the glasmateriaal is brought to flow.

机译:制备半糊精的方法,该方法使半糊精具有覆盖有窗户的玻璃膜层,该半透明膜具有窗口,在使玻璃膜流动的温度下进行热处理。

摘要

In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on the surface of at least a portion of a region of a second conductivity type opposite to the first conductivity type, this region being within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is at least partly removed to make the window for an electrode contact to the region of the second conductivity type.
机译:在用于制造具有包含第一导电类型的杂质的保护玻璃膜的半导体器件的工艺中,在与第一导电类型相反的第二导电类型的区域的至少一部分的表面上形成掩模膜,该区域在半导体衬底内。掩模膜不会被用于保护玻璃膜的蚀刻剂蚀刻,并且当通过加热保护玻璃膜的表面使之平滑时,防止了从保护玻璃膜发出的杂质进入该区域。在热处理之后,至少部分地去除掩模膜,以使用于电极的窗口接触第二导电类型的区域。

著录项

  • 公开/公告号NL182265C

    专利类型

  • 公开/公告日1988-02-01

    原文格式PDF

  • 申请/专利权人 FUJITSU LIMITED TE KANAGAWA JAPAN.;

    申请/专利号NL19780012385

  • 发明设计人

    申请日1978-12-21

  • 分类号H01L21/90;H01L29/44;

  • 国家 NL

  • 入库时间 2022-08-22 06:59:43

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