首页> 外国专利> Method of manufacture of garnet polycrystalline comprising aluminum and / or gallium and / or indium and at least one element taken from the group constituted by the rare earth and yttrium, corresponding monocrystals

Method of manufacture of garnet polycrystalline comprising aluminum and / or gallium and / or indium and at least one element taken from the group constituted by the rare earth and yttrium, corresponding monocrystals

机译:包含铝和/或镓和/或铟以及至少一种选自稀土和钇的元素的石榴石多晶的制造方法,相应的单晶

摘要

A process for the manufacture of a polycrystalline garnet containing aluminium and/or gallium and/or indium and at least one element taken from the group comprising the rare earths and yttrium, and to the corresponding monocrystal. The process comprises the following steps: (1) a solution containing the salts of the constituent cations of the garnet, in the proportions corresponding to the composition of the latter, is prepared; (2) corresponding hydroxides are co-precipitated by means of a base in order to obtain a co-hydroxide, the solution of salts and the base being added simultaneously at a temperature between ambient temperature and the boiling point of the solution of salts, in such a way that the pH of the medium is between about 5 and 10 and that, within these limits, it is kept at a constant value throughout the co-precipitation; (3) if appropriate, the co-hydroxide is left to age; (4) it is filtered off; (5) it is washed; (6) it is dried; and (7) it is then calcined at a temperature above the temperature for the formation of the desired garnet structure. The monocrystals obtained by Czochralski drawing of the polycrystalline garnets of the invention can be used, in particular, as substrates in magnetic bubble memory devices.
机译:一种用于制造多晶石榴石的方法,该多晶石榴石包含铝和/或镓和/或铟以及至少一种选自稀土和钇的元素以及相应的单晶。该方法包括以下步骤:(1)制备含有石榴石组成阳离子的盐的溶液,其比例对应于石榴石的组成; (2)通过碱将相应的氢氧化物共沉淀以获得共氢氧化物,在环境温度和盐溶液的沸点之间的温度下,同时加入盐和碱的溶液。介质的pH值在5到10之间,并且在这些限制内,在整个共沉淀过程中保持恒定值; (3)如果合适,将氢氧化氢陈化; (4)过滤掉; (5)洗净; (6)干燥; (7)然后在高于该温度的温度下煅烧以形成所需的石榴石结构。通过Czochralski拉伸本发明的多晶石榴石获得的单晶尤其可用作磁性气泡存储器件中的衬底。

著录项

  • 公开/公告号NO157533C

    专利类型

  • 公开/公告日1988-04-13

    原文格式PDF

  • 申请/专利权人 RHONE-POULENC INDUSTRIES;

    申请/专利号NO19800003362

  • 发明设计人 BOUDOT BERNARD;NURY GEORGES;

    申请日1980-11-07

  • 分类号C01B13/36;C30B29/22;C30B29/28;C01F17/00;C01G15/00;

  • 国家 NO

  • 入库时间 2022-08-22 06:59:36

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号