首页> 外国专利> METHODS FOR APPLYING SIMULTANEOUSLY ON A PLURALITY OF INTEGRATED CIRCUIT BOARDS A FILM HAVING A UNIFORM THICKNESS AND CONSISTING OF ARSENIC OR GERMANIUM SELENIDE GLASS SENSITIZED BY A SILVER SALT

METHODS FOR APPLYING SIMULTANEOUSLY ON A PLURALITY OF INTEGRATED CIRCUIT BOARDS A FILM HAVING A UNIFORM THICKNESS AND CONSISTING OF ARSENIC OR GERMANIUM SELENIDE GLASS SENSITIZED BY A SILVER SALT

机译:同时在多个整体电路板上应用具有均匀厚度并由银盐敏化的砷或锗硒玻璃的方法

摘要

Methods for simultaneously applying a plurality of integrated circuit chips a photosensitive film of uniform thickness in germanium selenide glass or arsenic sensitized with a silver salt. A device according to the invention comprises a reactor (1) chemical vapor deposition assisted by plasma, which is connected to a vacuum pump (4) and a gas distribution plate (6) which is connected on bottles ( 7, 8, 9) respectively containing nitrogen, hydrogen selenide and germane. The reactor (1) comprises a carriage (13) carrying pairs of graphite plates (15a, 15b) which are connected to a generator (17) of oscillating voltage. the silicon wafers (18) are laid against the electrodes (15a, 15b). One application is the manufacture of complex integrated circuits.
机译:在硒化锗玻璃或用银盐敏化的砷中同时施加多个厚度均匀的光敏膜的集成电路芯片的方法。根据本发明的装置包括由等离子体辅助的化学气相沉积的反应器(1),其连接至真空泵(4),并且气体分配板(6)分别连接至瓶(7、8、9)。含氮,硒化氢和锗烷。反应器(1)包括托架(13),托架(13)承载成对的石墨板(15a,15b),所述石墨板连接至振荡电压的发生器(17)。硅晶片(18)被放置在电极(15a,15b)上。一种应用是制造复杂的集成电路。

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