LOW SIDELOBE SOLID STATE ARRAY ANTENNA APPARATUS AND PROCESS FOR CONFIGURING AN ARRAY ANTENNA APERTURE

摘要

An apparatus antenna semiconductor array low sidelobe radiation comprises a large aperture radiation divided into a large number N, small closely spaced radiating apertures, each small radiating aperture being associated with a radiating element and a semiconductor power module linearly polarized. The large radiating aperture is divided into M, preferably between 3 and about 10 concentric radiation areas of elliptical shape and of different dimensions, superposed on each other, for purposes of analysis. Each of these areas has an output voltage amplitude Ei, and semi-major and respective lengths of semi-minor axis, ai and bi, each zone being considered separately in the equation of far field G (, PHI) = [ f (, PHI) (a cos PHI - AG (F) sin PHI cos)] 2, wherein f (, PHI) = (I), ui = (II), J1 (ui) is the Bessel function of the first order, and APHI are unit vectors in the spherical coordinate and Ko is the wave number associated with the radiation field. Using the equation of the far field, the values ​​of Ei, ai and bi for each area are calculated, whereby a peak gain of lateral lobe of the far field which is a minimum or a number specific dB, for example at least 30dB below the gain of the main lob of the far field. The values ​​of Ei in the overlapping areas are aditionnées to establish the voltage amplitude required of the underlying power modules associated with the N radiation openings.