PROCESS FOR THE PRODUCTION OF DIMENSIONAL STABLE STRUCTURES WITH A HIGH ASPECT PROPORTION IN THE 1 MILLIMICRON REGION AND BELOW FOR MICROELECTRONICS, AND USE OF THIS PROCESS FOR THE PRODUCTION OF X-RAY MASKS

摘要

1. A process for the production of precisely dimensioned structures with a high aspect ratio in the region of 1,3mm and less, such as are used in particular for the production of masks in micro-electronics, by the irradiation of lacquer layers which are sensitive to photon, electron, X-ray and ion beams, in which the actual layer which is to be structured is structured by means of wet or dry etching procedures by way of auxiliary layers which consist of at least three metals or metal oxides, characterised in that following the production of the layers (2, 3, 4, 5, 6) which are to be structured, until the start of the structuring procedure, an additional layer (7) which passivates the outermost auxiliary layer (6) is applied.