Modulation doped field effect transistor with doped Si.sub.x Ge. sub.1-x - intrinsic Si layering

摘要

A modulation doped field effect transistor (MODFET) having an n- conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1- x Ge. sub.x layer as well as an undoped Si layer.