Process for the production of a semiconductor laser with tape geometry and laser obtained by this process

摘要

Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process.P PAfter producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating. This is followed by local annealing by focussing an appropriate energy source. The electrical conduction properties of the annealed part are restored and it is doped. Thus, a p-doped conductive tape is produced between two electrically insulating parts above the active zone of the laser, which increases the current confinement in said zone.P PThe disclosed invention is used in optical telecommunications.