首页>
外国专利>
Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage
Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage
展开▼
机译:集成绝缘栅场效应晶体管电路,用于根据固定参考电压评估要采样的节点的电压
展开▼
页面导航
摘要
著录项
相似文献
摘要
The circuit merely comprises three transistors, namely one transfer transistor (t) arranged between the input (e) and the output (a), a load transistor (l) connected as a resistor, and a clamping transistor (k), with both of the latter connecting the output (a) to the source of operating voltage (U). The interconnected gates of both the clamping and the transfer transistor (k, t) are connected to a source of reference voltage (Ur). If these two transistors (k, t) are of the depletion type, the two gates thereof may be connected to the zero point of the circuit. The circuit is particularly quick and simple.
展开▼