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Integrated insulated-gate field-effect transistor circuit for evaluating the voltage of a node to be sampled against a fixed reference voltage

机译:集成绝缘栅场效应晶体管电路,用于根据固定参考电压评估要采样的节点的电压

摘要

The circuit merely comprises three transistors, namely one transfer transistor (t) arranged between the input (e) and the output (a), a load transistor (l) connected as a resistor, and a clamping transistor (k), with both of the latter connecting the output (a) to the source of operating voltage (U). The interconnected gates of both the clamping and the transfer transistor (k, t) are connected to a source of reference voltage (Ur). If these two transistors (k, t) are of the depletion type, the two gates thereof may be connected to the zero point of the circuit. The circuit is particularly quick and simple.
机译:该电路仅包括三个晶体管,即一个布置在输入(e)和输出(a)之间的传输晶体管(t),连接为电阻的负载晶体管(l)和钳位晶体管(k),两者均后者将输出(a)连接到工作电压(U)的源。钳位和传输晶体管(k,t)的互连的栅极都连接到参考电压(Ur)的源。如果这两个晶体管(k,t)是耗尽型的,则其两个栅极可以连接到电路的零点。该电路特别快速和简单。

著录项

  • 公开/公告号US4742253A

    专利类型

  • 公开/公告日1988-05-03

    原文格式PDF

  • 申请/专利权人 ITT INDUSTRIES INC.;

    申请/专利号US19830460957

  • 发明设计人 BURKHARD GIEBEL;

    申请日1983-01-25

  • 分类号H03K17/687;

  • 国家 US

  • 入库时间 2022-08-22 06:49:09

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