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One-transistor memory cell for large scale integration dynamic semiconductor memories and the method of manufacture thereof
One-transistor memory cell for large scale integration dynamic semiconductor memories and the method of manufacture thereof
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机译:用于大规模集成动态半导体存储器的单晶体管存储单元及其制造方法
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摘要
A one-transistor memory cell comprises a semiconductor body which has a thin insulating layer on a boundary surface and a conductive layer on the thin insulating layer, the conductive layer representing that electrode of a storage capacitor that is connected to a selection field effect transistor. The selection field effect transistor is realized in a layer applied as a polycrystalline semiconductor layer and is then recrystallized. The memory cell provides the smallest possible semiconductor surface. This is achieved in that the recrystallized semiconductor layer is disposed above the conductive layer 3 and is separated therefrom by an intermediate insulating layer, whereby it extends in the lateral direction, at most, up to the edge of the semiconductor layer 3.
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