Traveling vehicle of the mounting HST type transmission tower

摘要

PURPOSE:To reduce the rate of occurrence of a soft error by a method wherein, in a source-drain diffusion layer of a transfer gate transistor, an N+ diffusion layer is not formed in a part to which a lower-part electrode of a capacitor is connected. CONSTITUTION:A field oxide film 22 is formed selectively on a P-type silicon substrate 21; an electrode 24 is formed on an oxide film 23 formed in its active region. Then, phosphorus is ion-implanted by making use of the electrode 24 and the oxide film 22 as masks; a diffusion layer 25 is formed. After that, the oxide film which has been deposited on the whole surface is etched anisotropically; side walls 26 are formed. Then, a silicon nitride film 41 which has been deposited on the whole surface is patterned; it is left as an oxidation-resistant film only in a connection part of a lower- part electrode and a diffusion layer of a transistor. After that, the unnecessary oxide film 23 is removed; after that, ions are implanted; an N+ diffusion layer 27 is formed. Then, an oxide film 35 is formed by making use of the film 41 as a mask; after that, the film 41 and the oxide film 23 are removed; a contact hole 31 is formed. A lower- part electrode 28 is formed on the transistor and the oxide film 22. Then, a silicon nitride film 42 is deposited on the whole surface; an oxide film is formed on its surface. In addition, a polysilicon layer 43 is formed on the oxide film; an electrode 30 and a thin film 29 are formed.