PURPOSE:To enable accurate judgement on the occurrence of crystallization even when oriented crystallization occurs in an amorphous alloy, by combining a thin film X ray diffraction spectrum and a symmetrical reflection X ray diffraction spectrum. CONSTITUTION:X rays radiated from an X ray source 10 are made incident into the surface of a sample 12A of an amorphous alloy at an angle alpha through a solar slit 16, where the angle alpha of incidence is set below 6 deg., which enables a reduction in the penetration depth of the X rays. Diffraction X rays from the surface of the sample 12A is detected with a detector 14 through the solar slit 18 to judge crystallization near the surface of the alloy from intensity of diffraction X rays. A symmetrical reflection method is employed for a highly oriented amorphous alloy to measure the diffraction X rays as diffracted at a symmetrical position with normal of the surface of the sample in the angle in combination with a low angle fixed X ray diffraction method, thereby obtaining a finding regarding not only crystallization but also the orientation of a crystallized object.
展开▼
