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NOVEL GALLIUM ARSENIDE PRECURSOR AND LOW TEMPERATURE METHOD OF PREPARING GALLIUM ARSENIDE THEREFROM
NOVEL GALLIUM ARSENIDE PRECURSOR AND LOW TEMPERATURE METHOD OF PREPARING GALLIUM ARSENIDE THEREFROM
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机译:新型砷化镓前驱物和低温制备砷化镓的方法
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摘要
A novel gallium arsenide precursor has the formula R2GaAs(SiR')2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20°C to 60°C, preferably at room temperature, under water-free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions.
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