A thin film p-i-n solar cell (12) and Schottky barrier diode (14) are fabricated adjacent one another on a common flexible polyimide substrate (16). A titanium nitride diffusion barrier (24) prevents contaminants of an aluminum contact layer (22) on the substrate (16) from reacting with the semiconductor body of the solar cell (12) and diode (14) during subsequent fabrication. An n+-type hydrogenated amorphous silicon layer (26) overlies the layer of titanium nitride (24), and forms an ohmic contact with the solar cell (12) and diode (14). The diode (14) includes an n-type layer (36) of silicon doped with phosphorus to a concentration (36) of 1018 to 1020 atoms per cubic centimeter to increase its forward current density. The solar cell (12) and diode (14) are separated from one another by an epoxy strip (28). A top conducting oxide layer (38) forms a Schottky barrier with the semiconductor body of the diode (14).
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机译：在共同的柔性聚酰亚胺衬底（16）上彼此相邻地制造薄膜p-i-n太阳能电池（12）和肖特基势垒二极管（14）。氮化钛扩散阻挡层（24）防止在随后的制造期间基板（16）上的铝接触层（22）的污染物与太阳能电池（12）的半导体本体和二极管（14）反应。 n +型氢化非晶硅层（26）覆盖在氮化钛层（24）上，并与太阳能电池（12）和二极管（14）形成欧姆接触。二极管（14）包括掺杂有磷的硅的n型层（36），磷的浓度（36）为每立方厘米10 1 8至10 2 0个原子，以增加其正向电流密度。太阳能电池（12）和二极管（14）通过环氧条（28）彼此分开。顶部导电氧化物层（38）与二极管（14）的半导体本体形成肖特基势垒。
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