PURPOSE:To form an etching configuration having a taper in good controllability, by a method wherein an etching gas is mixed in resist removing oxygen when resist is removed after dry etching to form a mixed gas which is then supplied. CONSTITUTION:An object 32 to be etched such as an Al film is deposited on a substrate 31 and a resist pattern 33 is formed thereon. The resist pattern 33 is used as a mask and the object 32 to be etched is subjected to dry etching by an etching gas such as CCl4. Succeedingly, a mixed etching gas formed by mixing an etching gas in oxygen is supplied to remove the resist pattern 33. In this case, the etching at the outside part of the resist pattern 33 is rapidly advanced and exposure is started from the pattern part of the object 32 to be etched positioned at the outside of the pattern 33. Therefore, the etching of the pattern of the object 32 to be etched is also started from the outside thereof and a gentle taper 32A is formed.
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